kw.\*:("SPECTROSCOPIE TRANSITOIRE NIVEAU PROFOND")
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DEEP ELECTRON TRAPS IN ORGANOMETALLIC VAPOR PHASE GROWN ALXGA1-XASWAGNER EE; MARS DE; HOM G et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 10; PP. 5434-5437; BIBL. 19 REF.Article
An even cheaper capacitance meter suitable for fast transientsSLIFKIN, M. A; ALEXANDROS, A.Measurement science & technology (Print). 1990, Vol 1, Num 2, pp 195-197, issn 0957-0233Article
LUMINESCENCE OF ALXGA1-XAS GROWN BY MOVPEANDRE JP; BOULOU M; MICREA ROUSSEL A et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 1; PP. 192-197; BIBL. 14 REF.Conference Paper
DEEP LEVEL DEFECTS IN POLYCRYSTALLINE CADMIUM SULFIDEBESOMI P; WESSELS B.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4305-4309; BIBL. 13 REF.Article
ETUDE DE NIVEAUX PROFONDS DANS LE SILICIUM PAR METHODE CAPACITIVE = STUDY OF DEEP LEVELS IN SILICON USING A CAPACITIVE METHODPERRONNET ANNICK.1980; ; FRA; DA. 1980; 78 P.; 30 CM; BIBL. DISSEM.; TH. DOCT.-ING./CAEN/1980Thesis
ELECTRICAL AND OPTICAL PROPERTIES OF DEEP LEVELS IN MOVPE GROWN GAASSAMUELSON L; TITZE POH; GRIMMEIS HG et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 1; PP. 164-172; BIBL. 28 REF.Conference Paper